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| CHA2395 36-40GHz Low Noise Very High Gain Amplifier GaAs Monolithic Microwave IC Description The CHA2395 is a four-stage monolithic low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a HEMT process : 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. Vd Vd In Out Vg 1,2 Vg 3,4 Typical on wafer measurements : Main Features Broadband performances 3.0dB Noise Figure 30dB gain 1.0dB gain flatness Low DC power consumption, 90mA@3.5V Chip size : 2.07 X 1.11 X 0.10 mm 35 30 6 5 Gain (dB) 20 15 10 5 30 31 32 33 34 35 36 37 38 39 40 Frequency (GHz) 3 2 1 0 Main Characteristics Tamb. = 25C Symbol Fop G P1dB NF Parameter Operating frequency range Small signal gain Output power at 1dB gain compression Noise figure Min 36 25 8 Typ Max 40 Unit GHz dB dBm 30 10 3.0 4.0 dB ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! Ref. : DSCHA23952240 -28-Aug.-02 1/6 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Departementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 NF (dB) 25 4 CHA2395 Electrical Characteristics Tamb = +25C, Vd= 3.5V Symbol Fop G G Gsb Is P1dB Parameter Operating frequency range (1) Small signal gain (1) Small signal gain flatness (1) 36-40GHz Low Noise Amplifier Min 36 25 Typ Max 40 Unit GHz dB dB 30 1.5 0.5 Gain ripple over 40MHz ( within -30 ; +75C ) Reverse isolation (1) Output power at 1dB gain compression 35 8 40 10 2.5:1 2.5:1 3.0 Vd Vg 3.5 -2 90 dBpp dB dBm VSWRin Input VSWR (1) VSWRout Output VSWR (1) NF Vdc Noise figure (2) DC Voltage 3.0:1 3.0:1 4.0 4 +0.4 dB V V mA Id Bias current (2) (1) These values are representative of on-wafer measurements that are made without bonding wires at the RF ports. (2) 90 mA is the typical bias current used for on wafer measurements, with adjusting Vg1,2 voltage for optimum noise figure and Vg3,4 adjusting for maximum gain. Absolute Maximum Ratings Tamb. = 25C (1) Symbol Vd Vg Vdg Id Pin Ta Tstg (1) (2) Parameter Drain bias voltage Gate bias voltage Maximum drain to gate voltage (Vd - Vg) Drain bias current Maximum peak input power overdrive (2) Operating temperature range Storage temperature range Values 4.5 -2.0 to +0.4 +5.0 200 +15 -40 to +85 -55 to +125 Unit V V V mA dBm C C Operation of this device above anyone of these parameters may cause permanent damage. Duration < 1s. 2/6 Specifications subject to change without notice Ref. : DSCHA23952240 -28-Aug.-02 Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 36-40GHz Low Noise Amplifier Bias Conditions : Vd= 3.5 Volt, Id = 90 mA. CHA2395 Typical Scattering Parameters ( On wafer Sij measurements ) Freq. GHz 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 S11 dB -5,24 -5,01 -4,78 -4,69 -4,48 -4,30 -4,14 -4,06 -3,96 -3,90 -3,86 -3,87 -3,89 -4,01 -4,20 -4,54 -5,02 -5,79 -6,86 -8,43 -10,32 -10,65 -8,00 -8,21 -11,99 -15,87 -14,87 -11,78 -9,85 -9,90 -10,31 -11,12 -10,97 -11,41 -10,12 -9,49 -8,37 -6,94 -4,56 -2,37 -1,12 S11 / -150,46 -158,16 -165,56 -174,08 178,30 170,74 163,09 155,51 147,86 139,92 131,40 122,89 113,01 103,05 92,06 79,42 65,00 47,39 25,74 -4,01 -48,95 -117,68 166,44 89,15 29,31 -33,40 -104,81 -165,28 150,77 110,22 70,60 23,32 -34,96 -81,68 -107,79 -124,05 -137,10 -141,65 -148,72 -162,95 -178,98 S12 dB -56,39 -55,20 -53,92 -51,99 -50,31 -50,32 -49,22 -49,15 -48,70 -51,67 -50,35 -49,65 -49,59 -49,29 -48,05 -48,35 -49,93 -52,57 -58,44 -63,19 -55,24 -53,31 -53,65 -79,13 -60,45 -59,01 -57,53 -56,31 -54,01 -53,25 -52,00 -49,03 -44,98 -44,03 -43,67 -43,94 -42,57 -42,19 -42,90 -45,30 -46,39 S12 / -137,29 -143,40 -154,87 -164,65 175,46 148,72 142,18 127,08 105,03 105,23 95,30 83,53 72,64 63,32 44,03 23,21 -1,87 -14,93 -26,41 36,76 45,06 -1,55 -52,02 17,74 -9,35 -74,65 -151,67 150,87 109,01 84,99 74,63 82,09 72,62 33,59 15,35 -3,05 -16,03 -36,05 -62,08 -98,56 -149,92 S21 dB -24,05 -25,15 -26,75 -26,78 -29,21 -29,88 -31,36 -32,88 -35,34 -38,52 -38,79 -38,83 -46,84 -41,57 -30,98 -23,89 -17,47 -11,19 -4,59 2,43 10,00 18,04 25,85 30,33 30,68 30,91 31,07 31,05 30,82 30,03 29,21 28,21 26,87 25,36 24,92 24,57 24,33 24,14 23,38 21,22 18,32 S21 / -93,70 -112,11 -128,23 -139,11 -171,28 -145,86 -164,90 -167,67 177,24 -157,62 -162,11 -167,49 157,47 21,50 8,81 -1,06 -4,35 -13,07 -23,29 -38,25 -60,29 -93,20 -144,54 144,38 82,74 36,21 -6,18 -47,23 -86,98 -124,36 -159,55 167,67 135,99 111,44 87,03 60,05 31,65 -0,62 -38,45 -76,12 -110,54 S22 dB -6,44 -6,52 -6,55 -6,44 -6,37 -6,22 -6,10 -5,89 -5,79 -5,56 -5,26 -4,99 -4,88 -4,75 -4,67 -4,58 -4,53 -4,53 -4,50 -4,51 -4,54 -4,40 -4,42 -6,32 -9,78 -10,50 -10,26 -9,47 -9,53 -10,02 -10,97 -12,82 -12,78 -12,23 -14,15 -15,44 -18,63 -26,50 -16,32 -11,15 -9,10 S22 / -135,98 -142,09 -148,02 -151,89 -157,82 -163,81 -169,58 -175,56 177,73 172,92 165,80 158,13 150,61 142,43 134,00 124,88 115,26 104,69 93,03 79,20 62,45 39,47 3,69 -46,81 -94,59 -134,35 -167,64 163,94 139,99 120,62 107,97 99,68 101,14 88,12 73,36 63,47 37,49 -44,90 -150,01 172,71 145,34 Ref. : DSCHA23952240 -28-Aug.-02 3/6 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA2395 Typical on Wafer Measurements Tamb = +25C Vds=3.5V and Id=90mA 36-40GHz Low Noise Amplifier 30 Gain&Rloss (dB) 20 10 0 -10 -20 30 35 40 Frequency (GHz) 45 50 dBS11 dBS21 dBS22 35 30 Gain (dB) 6 5 NF (dB) 25 20 15 10 5 30 31 32 33 34 35 36 37 38 39 40 Frequency (GHz) 4 3 2 1 0 Ref. : DSCHA23952240 -28-Aug.-02 4/6 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 36-40GHz Low Noise Amplifier Chip Assembly and Mechanical Data To Vdd DC Drain supply feed 100pF CHA2395 IN OUT To Vgs1 DC Gate supply feed 100pF 100pF To Vgs2 DC Gate supply feed Note : Supply feed should be capacitively bypassed. 2070 +/-35 1000 700 1110 +/-35 520 880 1480 Bonding pad positions. ( Chip thickness : 100m. All dimensions are in micrometers ) Ref. : DSCHA23952240 -28-Aug.-02 5/6 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 520 CHA2395 The circuit schematic is given below : 36-40GHz Low Noise Amplifier Typical Bias Tuning for Low Noise Operation Vd Vd 100 IN 100 50 50 OUT Vg 1,2 Vg 3,4 For low noise operation, a separate access to the gate voltages of the two first stages ( Vg1,2 ), and of the two last stage ( Vg3,4 ) is provided. Nominal bias is obtained for a typical current of 60 mA for the output stages and 30 mA for the two first stages ( 90 mA for the amplifier ). The first step to bias the amplifier is to tune Vg1,2 = -1V, and Vg3,4 to drive 60 mA for the full amplifier. Then Vg1,2 is increased to obtain 90 mA of current through the amplifier. A fine tuning of the noise figure may be obtained by modifying the Vg1,2 bias voltage, but keeping the previous value for Vg3,4. It is possible to reduce the total DC current by biasing Vg3,4 to a more negative value. The consequences will be a reduction of gain and of the output power capabilities of the amplifier. Vd could be adjust in such a way that the Vds ( Drain to Source voltage of the internal transistor ) is kept below 3.5V, knowing that all the transistors have the same sizes and with the given resistors. Ordering Information Chip form : CHA2395-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHA23952240 -28-Aug.-02 6/6 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 |
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